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30V N-Channel Power MOSFET General Description The AAT7126 30V N-Channel Power MOSFET is a member of AnalogicTechTM's TrenchDMOSTM product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size. AAT7126 Features * * * VDS(MAX) = 30V ID(MAX) 1 = 6.8A @ 25C Low RDS(ON): * 26 m @VGS = 10V * 41 m @ VGS = 4.5V Applications * * * * Battery-powered portable equipment Laptop computers Desktop computers DC/DC converters Dual SOP-8 Package Preliminary Information Top View D1 8 D1 7 D2 6 D2 5 1 S1 2 G1 3 S2 4 G2 Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25C unless otherwise noted) Value 30 20 6.8 5.4 24 1.7 2.0 1.25 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150C 1 Units V TA = 25C TA = 70C Pulsed Drain Current Continuous Source Current (Source-Drain Diode) 1 TA = 25C Maximum Power Dissipation 1 TA = 70C Operating Junction and Storage Temperature Range A W C Thermal Characteristics Symbol RJA RJA2 RJC Description Typical Junction-to-Ambient steady state, one FET on Industry Standard Junction-to-Ambient Figure, t < 10 sec. Typical Junction-to-Case, one FET on Value 100 62.5 35 Units C/W C/W C/W 7126.2002.10.0.9 1 30V N-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25C unless otherwise noted) Conditions VGS=0V, ID=250A VGS=10V, ID=6.8A VGS=4.5V, ID=5.4A VGS=10V ,VDS=5V (Pulsed) VGS=VDS, ID=250A VGS=20V, VDS=0V VGS=0V,VDS=30V VGS=0V,VDS=30V, TJ=70C VDS=5V, ID=6.8A VDS=15V, ID=6.8A, VGS=5V VDS=15V, ID=6.8A, VGS=10V VDS=15V, ID=6.8A, VGS=10V VDS=15V, ID=6.8A, VGS=10V VDD=15V, VGS=10V, RD=3, RG=6 VDD=15V, VGS=10V, RD=3, RG=6 VDD=15V, VGS=10V, RD=3, RG=6 VDD=15V, VGS=10V, RD=3, RG=6 2 AAT7126 Min 30 Typ Max Units V DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) ID(ON) VGS(th) IGSS IDSS Drain-Source ON-Resistance On-State Drain Current 2 Gate Threshold Voltage Gate-Body Leakage Current Drain Source Leakage Current 2 19.5 32 24 1.0 26 41 m A V nA A S 100 1 5 14 8.6 16 2.5 2.8 3 3 12 6 13 24 gfs Forward Transconductance 2 Dynamic Characteristics 3 QG Total Gate Charge QGT Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current Note 2: Pulse test: pulse width = 300s nC nC nC nC ns ns ns ns V A VGS=0, IS=1.7A 1.2 1.7 Note 1: Mounted on 1" x 1" FR4 Copper Board, 10 sec pulse width. Note 3: Guaranteed by design. Not subjected to production testing. 2 7126.2002.10.0.9 30V N-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Forward Characteristics RDS(ON) / RDS(ON) at gate = 10 V 25 20 15 10 5 0 0 1 2 3 4 5 AAT7126 Normalized RDS(ON) 3 10V 6V 5V 4.5V 4V 3.5V 3V 2V 3.5V 4V 4.5V 2 ID (A) 1 5V 0 0 5 10 15 6V 10V 20 25 VD (V) ID (A) RDS(ON) vs. VG 100 25 Transfer 5A 80 20 RDS(ON) (m) 10A 15A ID (A) 6 8 10 60 40 20 0 0 2 4 15 10 5 0 0 1 2 3 4 5 VG (V) VG (V) Source to Drain Voltage 100 10 8 10 Gate Charge Characteristics Gate Voltage (V) 0.6 0.8 1 1.2 ISD (A) 6 4 2 0 0 4 8 12 16 20 1 0.1 0.4 VSD (V) Gate Charge (nC) 7126.2002.10.0.9 3 30V N-Channel Power MOSFET Ordering Information Package SOP-8 Marking 7126 Part Number (Tape and Reel) AAT7126IAS-T1 AAT7126 Note: Sample stock is generally held on all part numbers listed in BOLD. Package Information SOP-8 3.90 0.10 4.90 0.10 6.00 0.20 0.375 0.125 1.55 0.20 45 0.175 0.075 4 4 0.235 0.045 0.825 0.445 0.42 0.09 x 8 1.27 BSC All dimensions in millimeters. AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 4 7126.2002.10.0.9 |
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