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 30V N-Channel Power MOSFET General Description
The AAT7126 30V N-Channel Power MOSFET is a member of AnalogicTechTM's TrenchDMOSTM product family. Using the ultra-high density proprietary TrenchDMOS technology, this product demonstrates high power handling and small size.
AAT7126
Features
* * * VDS(MAX) = 30V ID(MAX) 1 = 6.8A @ 25C Low RDS(ON): * 26 m @VGS = 10V * 41 m @ VGS = 4.5V
Applications
* * * * Battery-powered portable equipment Laptop computers Desktop computers DC/DC converters
Dual SOP-8 Package
Preliminary Information
Top View
D1 8 D1 7 D2 6 D2 5
1 S1
2 G1
3 S2
4 G2
Absolute Maximum Ratings
Symbol
VDS VGS ID IDM IS PD TJ, TSTG
(TA=25C unless otherwise noted) Value
30 20 6.8 5.4 24 1.7 2.0 1.25 -55 to 150
Description
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150C
1
Units
V
TA = 25C TA = 70C
Pulsed Drain Current Continuous Source Current (Source-Drain Diode) 1 TA = 25C Maximum Power Dissipation 1 TA = 70C Operating Junction and Storage Temperature Range
A
W C
Thermal Characteristics
Symbol
RJA RJA2 RJC
Description
Typical Junction-to-Ambient steady state, one FET on Industry Standard Junction-to-Ambient Figure, t < 10 sec. Typical Junction-to-Case, one FET on
Value
100 62.5 35
Units
C/W C/W C/W
7126.2002.10.0.9
1
30V N-Channel Power MOSFET Electrical Characteristics
Symbol Description (TJ=25C unless otherwise noted) Conditions
VGS=0V, ID=250A VGS=10V, ID=6.8A VGS=4.5V, ID=5.4A VGS=10V ,VDS=5V (Pulsed) VGS=VDS, ID=250A VGS=20V, VDS=0V VGS=0V,VDS=30V VGS=0V,VDS=30V, TJ=70C VDS=5V, ID=6.8A VDS=15V, ID=6.8A, VGS=5V VDS=15V, ID=6.8A, VGS=10V VDS=15V, ID=6.8A, VGS=10V VDS=15V, ID=6.8A, VGS=10V VDD=15V, VGS=10V, RD=3, RG=6 VDD=15V, VGS=10V, RD=3, RG=6 VDD=15V, VGS=10V, RD=3, RG=6 VDD=15V, VGS=10V, RD=3, RG=6
2
AAT7126
Min
30
Typ
Max
Units
V
DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) ID(ON) VGS(th) IGSS IDSS Drain-Source ON-Resistance On-State Drain Current 2 Gate Threshold Voltage Gate-Body Leakage Current Drain Source Leakage Current
2
19.5 32 24 1.0
26 41
m A V nA A S
100 1 5 14 8.6 16 2.5 2.8 3 3 12 6 13 24
gfs Forward Transconductance 2 Dynamic Characteristics 3 QG Total Gate Charge QGT Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current
Note 2: Pulse test: pulse width = 300s
nC nC nC nC ns ns ns ns V A
VGS=0, IS=1.7A
1.2 1.7
Note 1: Mounted on 1" x 1" FR4 Copper Board, 10 sec pulse width.
Note 3: Guaranteed by design. Not subjected to production testing.
2
7126.2002.10.0.9
30V N-Channel Power MOSFET Typical Characteristics
(TJ = 25C unless otherwise noted) Forward Characteristics
RDS(ON) / RDS(ON) at gate = 10 V
25 20 15 10 5 0 0 1 2 3 4 5
AAT7126
Normalized RDS(ON)
3
10V 6V
5V 4.5V 4V 3.5V 3V 2V
3.5V
4V
4.5V
2
ID (A)
1
5V
0 0 5 10 15
6V
10V
20
25
VD (V)
ID (A)
RDS(ON) vs. VG
100 25
Transfer
5A
80 20
RDS(ON) (m)
10A 15A ID (A)
6 8 10 60 40 20 0 0 2 4 15 10 5 0 0 1 2 3 4 5
VG (V)
VG (V)
Source to Drain Voltage
100 10 8 10
Gate Charge Characteristics
Gate Voltage (V)
0.6 0.8 1 1.2
ISD (A)
6 4 2 0 0 4 8 12 16 20
1
0.1 0.4
VSD (V)
Gate Charge (nC)
7126.2002.10.0.9
3
30V N-Channel Power MOSFET Ordering Information
Package SOP-8 Marking 7126 Part Number (Tape and Reel) AAT7126IAS-T1
AAT7126
Note: Sample stock is generally held on all part numbers listed in BOLD.
Package Information
SOP-8
3.90 0.10 4.90 0.10
6.00 0.20
0.375 0.125 1.55 0.20
45
0.175 0.075
4 4
0.235 0.045 0.825 0.445
0.42 0.09 x 8
1.27 BSC
All dimensions in millimeters.
AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed.
Advanced Analogic Technologies, Inc.
830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 4
7126.2002.10.0.9


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